In situ real-time study of chemical etching process of Si(100) using light scattering
نویسندگان
چکیده
We report the development of an in situ real-time light scattering technique to study the wet chemical etching process of Si~100!. Based on a simple scattering theory, the number of etch pits and other statistical parameters such as correlation length and interface width on a pitted surface are extracted from the scattering profile. The time evolution of the surface morphology can be interpreted by a simple rate equation. © 1996 American Institute of Physics. @S0003-6951~96!02528-4#
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تاریخ انتشار 1996